Ultra-fast Semiconductor Device and Thin-film Characterization in 3D at the Nanoscale

Home > Insights > Ultra-fast Semiconductor Device and Thin-film Characterization in 3D at the Nanoscale

Atomic Force Microscope (AFM) can be used to look at a variety of microfabricated devices ranging from microfluidics and photonics crystals to semiconductor devices. With the nGauge AFM, it is possible to easily obtain a three-dimensional image of the sample in just a few minutes.

Furthermore, nGauge scans are performed in ambient conditions on a benchtop without necessitating any complex sample preparation steps. The nGauge can image samples whether they are conductive, semiconducting, or dielectric—whereas SEMs can only image conductive samples reliably. Dielectric samples must be coated with a thin layer of metal to image with SEM. Furthermore, the extra expense and time required by the vacuum operation requirement of electron imaging is avoided. By not needing these two sample preparation steps, the nGauge can save users about an hour per sample, enabling much higher throughput.